Crystalline properties of MoS2 thin films grown on metallic substrates
Identifieur interne : 000C01 ( Main/Exploration ); précédent : 000C00; suivant : 000C02Crystalline properties of MoS2 thin films grown on metallic substrates
Auteurs : E. Gourmelon [France] ; J. Pouzet [France] ; J. C Bernede [France] ; H. Hadouda [Algérie] ; A. Khelil [Algérie] ; R. Le Ny [France]Source :
- Materials Chemistry and Physics [ 0254-0584 ] ; 1999.
Abstract
MoS2 thin films have been achieved on molybdenum, tantalum and tungsten substrates. The films were obtained by solid state reaction between the constituents in thin film form, the substrates being coated by a thin Ni layer. Multilayer samples Mo/S/Mo–Mo/S were annealed under argon flow at T=1073K or 1123K for 30min. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and X-ray photoelectron spectroscopy (XPS). All films are nearly stoichoimetric and crystallized in the expected 2H-MoS2 structure. (XPS analysis confirms the stoichoimetry and the small contamination of the films while Ni was detected at the surface of the samples). The films are polycrystalline but the size and the orientation of the crystallites depend on the substrates. While in the case of tungsten substrates the crystallite size reach the total thickness of the film (≥100nm) and are highly oriented with their c-axis perpendicular to the plane of the substrate, in the case of the other refractory metals (Ta, Mo), their size is smaller and the texture of the films is not so good. These differences are explained by the influence of the crystalline properties of the substrates on the growth process of MoS2 thin films. The current–voltage characteristic of the W/Ni/MoS2/W structure show that an ohmic contact is obtained.
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DOI: 10.1016/S0254-0584(99)00010-3
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Khelil</name><affiliation wicri:level="3"><country xml:lang="fr">Algérie</country><wicri:regionArea>Laboratoire de Physique des Matériaux et Composants pour l'Electronique, Université d'Oran Es Sénia, Oran</wicri:regionArea><placeName><settlement type="city">Oran</settlement><region nuts="2">Wilaya d'Oran</region></placeName></affiliation></author><author><name sortKey="Le Ny, R" sort="Le Ny, R" uniqKey="Le Ny R" first="R" last="Le Ny">R. Le Ny</name><affiliation wicri:level="3"><country xml:lang="fr">France</country><wicri:regionArea>EPSE Equipe Couches Minces et Matériaux Nouveaux, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, 44322, Nantes Cedex 3</wicri:regionArea><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName></affiliation></author></analytic><monogr></monogr><series><title level="j">Materials Chemistry and Physics</title><title level="j" type="abbrev">MAC</title><idno type="ISSN">0254-0584</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1999">1999</date><biblScope unit="volume">58</biblScope><biblScope unit="issue">3</biblScope><biblScope unit="page" from="280">280</biblScope><biblScope unit="page" to="284">284</biblScope></imprint><idno type="ISSN">0254-0584</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0254-0584</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">MoS2 thin films have been achieved on molybdenum, tantalum and tungsten substrates. The films were obtained by solid state reaction between the constituents in thin film form, the substrates being coated by a thin Ni layer. Multilayer samples Mo/S/Mo–Mo/S were annealed under argon flow at T=1073K or 1123K for 30min. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and X-ray photoelectron spectroscopy (XPS). All films are nearly stoichoimetric and crystallized in the expected 2H-MoS2 structure. (XPS analysis confirms the stoichoimetry and the small contamination of the films while Ni was detected at the surface of the samples). The films are polycrystalline but the size and the orientation of the crystallites depend on the substrates. While in the case of tungsten substrates the crystallite size reach the total thickness of the film (≥100nm) and are highly oriented with their c-axis perpendicular to the plane of the substrate, in the case of the other refractory metals (Ta, Mo), their size is smaller and the texture of the films is not so good. These differences are explained by the influence of the crystalline properties of the substrates on the growth process of MoS2 thin films. The current–voltage characteristic of the W/Ni/MoS2/W structure show that an ohmic contact is obtained.</div></front></TEI><affiliations><list><country><li>Algérie</li><li>France</li></country><region><li>Pays de la Loire</li><li>Wilaya d'Oran</li></region><settlement><li>Nantes</li><li>Oran</li></settlement></list><tree><country name="France"><region name="Pays de la Loire"><name sortKey="Gourmelon, E" sort="Gourmelon, E" uniqKey="Gourmelon E" first="E" last="Gourmelon">E. Gourmelon</name></region><name sortKey="Bernede, J C" sort="Bernede, J C" uniqKey="Bernede J" first="J. C" last="Bernede">J. C Bernede</name><name sortKey="Le Ny, R" sort="Le Ny, R" uniqKey="Le Ny R" first="R" last="Le Ny">R. Le Ny</name><name sortKey="Pouzet, J" sort="Pouzet, J" uniqKey="Pouzet J" first="J" last="Pouzet">J. Pouzet</name></country><country name="Algérie"><region name="Wilaya d'Oran"><name sortKey="Hadouda, H" sort="Hadouda, H" uniqKey="Hadouda H" first="H" last="Hadouda">H. Hadouda</name></region><name sortKey="Khelil, A" sort="Khelil, A" uniqKey="Khelil A" first="A" last="Khelil">A. Khelil</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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